Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
Jibran Hussain,
Haris Naeem Abbasi,
Wei Wang,
Yan-Feng Wang,
Ruozheng Wang,
Hong-Xing Wang
Affiliations
Jibran Hussain
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
Haris Naeem Abbasi
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
Wei Wang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
Yan-Feng Wang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
Ruozheng Wang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
Hong-Xing Wang
Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques. The maximum output current for SD-HfSiON/ALD-Al2O3 was 36 mA mm−1, and for ALD-Al2O3, it was 31 mA mm−1. We reported that the hysteresis shift voltage of the bilayer dielectric MOSFET was one fourth of the single dielectric layer MOSFET. The leakage current density of SD-HfSiON/ALD-Al2O3 was one order of magnitude lower than the single layer dielectric. We also determined the dielectric constants of HfSiON/Al2O3 and Al2O3 dielectrics based on capacitance–voltage characteristics. The values of VTH, on/off ratio, subthreshold swing, and low field mobility for the bilayer dielectric MOSFET were evaluated to be 4.5 V, 105, 296 mV/decade, and 154 cm2 V−1 s−1, respectively.
