Phase Diagram of the Sn–As–Ge System

Abstract

The paper presents the phase diagram of the Sn–As–Ge system. The diagram of polythermal Sn–GeAs section was constructed using the results of X-ray powder diffraction analysis and differential thermal analysis. We found that in a concentration interval with arsenic content of less than 50 mol%, four-phase peritectic equilibria L + SnAs ↔ GeAs + Sn4As3 (834 К) and L + GeAs ↔ Ge + Sn4As3 (821 К) are present. When the temperature is close to the melting point of pure tin, non-variant equilibrium with tin, germanium, and Sn4As3 is implemented as well. The study of Sn0.39As0.61–Ge0.28As0.72, SnAs–Ge0.4As0.6 and SnAs–GeAs2 sections and elaboration of the type of the SnAs–GeAs phase diagram demonstrated that polythermal sections SnAs–GeAs and SnAs–GeAs2 can perform phase subsolidus demarcation of the phase diagram of the Sn–As–Ge system. There are also invariant peritectic equilibria L + GeAs2 ↔ GeAs + SnAs (840 К) and L + As ↔ SnAs + GeAs2 (843 К) in the system.

Keywords

• Phase diagram
• germanium arsenide
• tin arsenide
• ternary system