Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage
Wen‐Hu Qian,
Xue‐Feng Cheng,
Jin Zhou,
Jing‐Hui He,
Hua Li,
Qing‐Feng Xu,
Na‐Jun Li,
Dong‐Yun Chen,
Zhi‐Gang Yao,
Jian‐Mei Lu
Affiliations
Wen‐Hu Qian
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Xue‐Feng Cheng
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Jin Zhou
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Jing‐Hui He
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Hua Li
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Qing‐Feng Xu
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Na‐Jun Li
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Dong‐Yun Chen
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Zhi‐Gang Yao
Testing and Analysis Center Soochow University Suzhou China
Jian‐Mei Lu
National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou China
Abstract Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power, allowing for low‐power computation and multilevel information storage. Many organic‐inorganic lead perovskites are reported to demonstrate memristive behavior, but few have been considered for use as a multilevel memory; also, their potential application has been hindered by the toxicity of lead ions. In this article, lead‐free perovskite MASnBr3 was utilized in memristors for quaternary information storage. Indium tin oxide (ITO)/MASnBr3/Au memristors were fabricated and showed reliable memristive switching with well‐separated ON/OFF states of a maxima resistance ratio of 102 to 103. More importantly, four resistive states can be distinguished and repeatedly written/read/erased with a retention time of 104 seconds and an endurance of 104 pulses. By investigating the current‐electrode area relationship, Br distribution in the ON/OFF states by in situ Raman and scanning electron microscopy, and temperature‐dependent current decay, the memristive behavior was explicitly attributed to the forming/breaking of conductive filaments caused by the migration of Br− under an electric field. In addition, poly(ethylene terephthalate)‐ITO/MASnBr3/Au devices were found to retain their multiresistance state behavior after being bent for 1000 times, thus demonstrating good device flexibility. Our results will inspire more lead‐free perovskite work for multilevel information storage, as well as other memristor‐based electronics.
