The Architectonics Features of Heterostructures for IR Range Detectors Based on Polycrystalline Layers of Lead Chalcogenides
Yuliya Mikhailovna Spivak,
Irina Evgen’evna Kononova,
Pavel Vasil’evich Kononov,
Vyacheslav Alexeyevich Moshnikov,
Sergey Anatol’evich Ignat’ev
Affiliations
Yuliya Mikhailovna Spivak
Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint-Petersburg Electrotechnical University «LETI», 5, pr. Popova, 197376 Saint-Petersburg, Russia
Irina Evgen’evna Kononova
Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint-Petersburg Electrotechnical University «LETI», 5, pr. Popova, 197376 Saint-Petersburg, Russia
Pavel Vasil’evich Kononov
Department of Descriptive Geometry and Graphics, Faculty of Basic and Human Sciences, Saint-Petersburg Mining University, 2, 21st Line, 199106 Saint-Petersburg, Russia
Vyacheslav Alexeyevich Moshnikov
Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint-Petersburg Electrotechnical University «LETI», 5, pr. Popova, 197376 Saint-Petersburg, Russia
Sergey Anatol’evich Ignat’ev
Department of Descriptive Geometry and Graphics, Faculty of Basic and Human Sciences, Saint-Petersburg Mining University, 2, 21st Line, 199106 Saint-Petersburg, Russia
A model is developed for the formation of porous intragranular architectonics of nanostructured polycrystalline layers of lead chalcogenides for photodetectors and IR emitters. The layers are obtained under the conditions of thermal evaporation in a quasi-closed volume by the “hot wall” method followed by sensitizing heat treatment in an iodine-containing atmosphere. Model concepts are developed considering the experimental results of studying the intragranular structure of lead chalcogenides through original combined AFM methods over the cross-section of porous grains (cores) encapsulated by an oxide shell (lateral force microscopy and local tunneling I–V spectroscopy).
