Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method
Byeongchan So,
Junchae Lee,
Changheon Cheon,
Joohyung Lee,
Uiho Choi,
Minho Kim,
Jindong Song,
Joonyeon Chang,
Okhyun Nam
Affiliations
Byeongchan So
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Junchae Lee
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Changheon Cheon
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Joohyung Lee
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Uiho Choi
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Minho Kim
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Jindong Song
Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Hwarang-ro 14 gil, Seongbuk-gu, Seoul 02792, Republic of Korea
Joonyeon Chang
Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Hwarang-ro 14 gil, Seongbuk-gu, Seoul 02792, Republic of Korea
Okhyun Nam
CANS (Convergence Center for Advanced Nano Semiconductor), Department of Nano & Semiconductor Engineering, Korea Polytechnic University, 237 Sangidaehakro, Siheung, Gyeonggi-do 15073, Republic of Korea
Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH3 pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors.
