Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

Nanhong Chen; Honglong Ning; Zhihao Liang; Xianzhe Liu; Xiaofeng Wang; Rihui Yao; Jinyao Zhong; Xiao Fu; Tian Qiu; Junbiao Peng

doi:10.3390/mi12121496

Micromachines (Nov 2021)

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

Nanhong Chen,
Honglong Ning,
Zhihao Liang,
Xianzhe Liu,
Xiaofeng Wang,
Rihui Yao,
Jinyao Zhong,
Xiao Fu,
Tian Qiu,
Junbiao Peng

Affiliations

Nanhong Chen: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Honglong Ning: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Zhihao Liang: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Xianzhe Liu: Research Center of Flexible Sensing Materials and Devices, School of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China
Xiaofeng Wang: Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Rihui Yao: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Jinyao Zhong: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Xiao Fu: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Tian Qiu: Department of Intelligent Manufacturing, Wuyi University, Jiangmen 529020, China
Junbiao Peng: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

DOI: https://doi.org/10.3390/mi12121496
Journal volume & issue: Vol. 12, no. 12
p. 1496

Abstract

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The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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