Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
S. Lazić,
E. Chernysheva,
Ž. Gačević,
H. P. van der Meulen,
E. Calleja,
J. M. Calleja Pardo
Affiliations
S. Lazić
Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
E. Chernysheva
Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
Ž. Gačević
ISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid, Spain
H. P. van der Meulen
Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
E. Calleja
ISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid, Spain
J. M. Calleja Pardo
Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.
