Chalcogenide Ovonic Threshold Switching Selector

Zihao Zhao; Sergiu Clima; Daniele Garbin; Robin Degraeve; Geoffrey Pourtois; Zhitang Song; Min Zhu

doi:10.1007/s40820-023-01289-x

Nano-Micro Letters (Jan 2024)

Chalcogenide Ovonic Threshold Switching Selector

Zihao Zhao,
Sergiu Clima,
Daniele Garbin,
Robin Degraeve,
Geoffrey Pourtois,
Zhitang Song,
Min Zhu

Affiliations

Zihao Zhao: National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Sergiu Clima: IMEC
Daniele Garbin: IMEC
Robin Degraeve: IMEC
Geoffrey Pourtois: IMEC
Zhitang Song: National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Min Zhu: National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

DOI: https://doi.org/10.1007/s40820-023-01289-x
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 40

Abstract

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Highlights The development history and key milestones of ovonic threshold switch (OTS) materials were comprehensively summarized. Combined with the latest advancements of OTS research, the mainstream OTS material systems were systematically introduced. A thorough overview of the prevailing viewpoints regarding the OTS switching mechanisms was presented. Recent progress in OTS devices for applications in 3D memory, self-selecting memory, and neuromorphic computing was summarized.

Published in Nano-Micro Letters

ISSN: 2311-6706 (Print); 2150-5551 (Online)
Publisher: SpringerOpen
Country of publisher: Germany
LCC subjects: Technology
Website: http://www.springer.com/40820

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