We present a fiber coupled transceiver head for terahertz (THz) time-domain reflection measurements. The monolithically integrated transceiver chip is based on iron (Fe) doped In0.53Ga0.47As (InGaAs:Fe) grown by molecular beam epitaxy. Due to its ultrashort electron lifetime and high mobility, InGaAs:Fe is very well suited as both THz emitter and receiver. A record THz bandwidth of 6.5 THz and a peak dynamic range of up to 75 dB are achieved. In addition, we present THz imaging in reflection geometry with a spatial resolution as good as 130 µm. Hence, this THz transceiver is a promising device for industrial THz sensing applications.
