Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

I-Hsin Tseng; Po-Ning Hsu; Wei-You Hsu; Dinh-Phuc Tran; Benson Tsu-Hung Lin; Chia-Cheng Chang; K.N. Tu; Chih Chen

Results in Physics (Dec 2021)

Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

I-Hsin Tseng,
Po-Ning Hsu,
Wei-You Hsu,
Dinh-Phuc Tran,
Benson Tsu-Hung Lin,
Chia-Cheng Chang,
K.N. Tu,
Chih Chen

Affiliations

I-Hsin Tseng: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Po-Ning Hsu: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Wei-You Hsu: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Dinh-Phuc Tran: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Benson Tsu-Hung Lin: MediaTek Inc., Hsinchu 30010, Taiwan, ROC
Chia-Cheng Chang: MediaTek Inc., Hsinchu 30010, Taiwan, ROC
K.N. Tu: Department of Materials Science and Engineering, UCLA, Los Angeles, CA, USA
Chih Chen: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Corresponding author at: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC.

Journal volume & issue: Vol. 31
p. 105048

Abstract

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Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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