A Novel Strategy to Enhance the Photostability of InP/ZnSe/ZnS Quantum Dots with Zr Doping

Xunqiang Cheng; Mingming Liu; Qinggang Zhang; Mengda He; Xinrong Liao; Qun Wan; Wenji Zhan; Long Kong; Liang Li

doi:10.3390/nano12224044

Nanomaterials (Nov 2022)

A Novel Strategy to Enhance the Photostability of InP/ZnSe/ZnS Quantum Dots with Zr Doping

Xunqiang Cheng,
Mingming Liu,
Qinggang Zhang,
Mengda He,
Xinrong Liao,
Qun Wan,
Wenji Zhan,
Long Kong,
Liang Li

Affiliations

Xunqiang Cheng: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Mingming Liu: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Qinggang Zhang: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Mengda He: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Xinrong Liao: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Qun Wan: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Wenji Zhan: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Long Kong: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Liang Li: School of Environment Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

DOI: https://doi.org/10.3390/nano12224044
Journal volume & issue: Vol. 12, no. 22
p. 4044

Abstract

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Plentiful research of InP semiconductor quantum dots (QDs) has been launched over the past few decades for their excellent photoluminescence properties and environmentally friendly characteristics in various applications. However, InP QDs show inferior photostability because they are extremely sensitive to the ambient environment. In this study, we propose a novel method to enhance the photostability of InP/ZnSe/ZnS QDs by doping zirconium into the ZnS layer. We certify that Zr can be oxidized to Zr oxides, which can prevent the QDs from suffering oxidation during light irradiation. The InP/ZnSe/ZnS:Zr QDs maintained 78% of the original photoluminescence quantum yields without significant photodegradation under the irradiation of LED light (450 nm, 3.0 W power intensity) for 14 h, while conventional InP/ZnSe/ZnS QDs dramatically decreased to 29%.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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