Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2

Abstract

Topological insulators could be ideal materials for use in electronic devices but complications arising at the interface with metallic electrodes degrades performance values. Here, the authors propose VSe2 as an electrode material investigating the charge dynamics and interface quality using ultrafast transient reflectance measurements and demonstrating the preservation of Dirac surface states of the topological insulator.