High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Che-Wei Hsu; Yueh-Chin Lin; Shao-Lun Lee; Kai-Wen Chen; Ying-Ciao Chen; Edward Yi Chang

doi:10.35848/1882-0786/ad5949

Applied Physics Express (Jan 2024)

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Che-Wei Hsu,
Yueh-Chin Lin,
Shao-Lun Lee,
Kai-Wen Chen,
Ying-Ciao Chen,
Edward Yi Chang

Affiliations

Che-Wei Hsu: ORCiD; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan, R.O.C.
Yueh-Chin Lin: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan, R.O.C.
Shao-Lun Lee: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan, R.O.C.
Kai-Wen Chen: International College of Semiconductor Technology, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan R.O.C
Ying-Ciao Chen: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan, R.O.C.
Edward Yi Chang: Department of Materials Science and Engineering, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan, R.O.C.; International College of Semiconductor Technology, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan R.O.C; Department of Electronics Engineering, National Yang Ming Chiao Tung University , Hsinchu 300, Taiwan R.O.C

DOI: https://doi.org/10.35848/1882-0786/ad5949
Journal volume & issue: Vol. 17, no. 7
p. 071001

Abstract

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In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R _c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μ m device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at V _DS = 28 V, and an OIP3/ P _DC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μ m at V _DS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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