Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Aug 2010)
Diagnostics of deep centers on the border of film–substrate in thin-film all-epitaxial structures of GaAs
Abstract
A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsic illumination from the shift of the inflection point in the capacitance-voltage curve. The reliability of the method is confirmed by measurement of the concentration of vacant deep traps in GaAs wafers with and without a buffer layer.