Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

Abstract

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.

Keywords

• ambipolar transistor
• chemical and biological sensors
• device modeling
• frequency response
• small-signal model
• electrophysiology
• graphene field-effect transistor (GFET)
• graphene electrolyte-gated field-effect transistor (EGFET)