AgNbO3 antiferroelectric film with high energy storage performance

Yanle Zhang; Xiaobo Li; Jianmin Song; Suwei Zhang; Jing Wang; Xiuhong Dai; Baoting Liu; Guoyi Dong; Lei Zhao

Journal of Materiomics (Nov 2021)

AgNbO3 antiferroelectric film with high energy storage performance

Yanle Zhang,
Xiaobo Li,
Jianmin Song,
Suwei Zhang,
Jing Wang,
Xiuhong Dai,
Baoting Liu,
Guoyi Dong,
Lei Zhao

Affiliations

Yanle Zhang: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
Xiaobo Li: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
Jianmin Song: College of Science, Hebei Agricultural University, Baoding, 071001, China
Suwei Zhang: Center for Advanced Measurement Science, National Institute of Metrology, Beijing, 100029, China
Jing Wang: State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
Xiuhong Dai: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
Baoting Liu: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
Guoyi Dong: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China; Corresponding author.
Lei Zhao: Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China; Corresponding author.

Journal volume & issue: Vol. 7, no. 6
pp. 1294 – 1300

Abstract

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Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates. However, most of the AgNbO3 based ceramics suffers from low dielectric breakdown strength (Eb). The limitation of low Eb is broken to some extent in this work. Here, AgNbO3 epitaxial films were fabricated by pulsed laser deposition, which possess high Eb of 624 kV/cm. The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm. A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO3 film for energy storage applications.

Published in Journal of Materiomics

ISSN: 2352-8478 (Print); 2352-8486 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.sciencedirect.com/journal/journal-of-materiomics

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