Studying the effect of technological scatter of parameters on the temperature error of the output signal of a pressure strain gauge used as part of information-measuring systems

Abstract

Background. An analytical method for determining the error of the output signal of a semiconductor pressure transducer used in information-measuring systems (hereinafter - IMS) is considered. The purpose of the study is to determine the dependence of the temperature component of the output signal error of the bridge circuit of a semiconductor pressure transducer used in information-measuring systems of various purposes, on the spread of doping impurity concentration values when manufacturing integrated silicon tensile resistors doped with boron. Materials and methods. The study is carried out by the method of compiling an algorithm for calculating the relative error of the output signal depending on the spread of the values of the dopant concentration in the MathCAD software package. Results. Numerical values of the relative temperature error of the output signal of a semiconductor pressure transducer have been obtained, and the dependence of the error on the deviation of concentration values from nominal values by ±10% has been determined. Conclusions. Based on the analysis of the data obtained, the value of the dopant concentration was determined, at which the error of the output signal is minimal.

Keywords

• concentration of dopant
• semiconductor strain-resistant pressure sensor
• output signal error
• relative error