Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Films
A. El hat,
I. Chaki,
R. Essajai,
A. Mzerd,
G. Schmerber,
M. Regragui,
A. Belayachi,
Z. Sekkat,
A. Dinia,
A. Slaoui,
M. Abd-Lefdil
Affiliations
A. El hat
Group of Semiconductors and Environmental Sensor Technologies- Energy Research Center, Faculty of Science, Mohammed V University, B. P. 1014, Rabat 1957, Morocco
I. Chaki
Faculty of Sciences, Mohammed V University, Rabat 1957, Morocco
R. Essajai
Group of Semiconductors and Environmental Sensor Technologies- Energy Research Center, Faculty of Science, Mohammed V University, B. P. 1014, Rabat 1957, Morocco
A. Mzerd
Group of Semiconductors and Environmental Sensor Technologies- Energy Research Center, Faculty of Science, Mohammed V University, B. P. 1014, Rabat 1957, Morocco
G. Schmerber
Institute of Physics and Chemistry of Materials of Strasbourg, University of Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, CEDEX 2, F-67034 Strasbourg, France
M. Regragui
Faculty of Sciences, Mohammed V University, Rabat 1957, Morocco
A. Belayachi
Faculty of Sciences, Mohammed V University, Rabat 1957, Morocco
Z. Sekkat
Faculty of Sciences, Mohammed V University, Rabat 1957, Morocco
A. Dinia
Institute of Physics and Chemistry of Materials of Strasbourg, University of Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, CEDEX 2, F-67034 Strasbourg, France
A. Slaoui
Institute of Physics and Chemistry of Materials of Strasbourg, University of Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, CEDEX 2, F-67034 Strasbourg, France
M. Abd-Lefdil
Faculty of Sciences, Mohammed V University, Rabat 1957, Morocco
Structural, optical and electrical properties of (ytterbium/terbium) co-doped ZnO thin films deposited on glass substrates using the spray pyrolysis method were investigated. The films exhibited the hexagonal wurtzite structure with a preferential orientation along (002) direction. No secondary phase was observed in the X-ray diffraction detection limit. Atomic force microscopy (AFM) was performed and root means square roughness (RMS) of our samples decreased with terbium content. Photoluminescence measurements showed a luminescence band at 980 nm which is characteristic of Yb3+ transition between the electronic levels 2F5/2 to 2F7/2. This is experimental evidence for an efficient energy transfer from the ZnO matrix to Yb. Hall Effect measurements gave a low electrical resistivity value around 6.0 × 10−3 Ω.cm. Such characteristics make these films of interest to photovoltaic devices.
