Gate‐tunable Berry curvature in van der Waals itinerant ferromagnetic Cr7Te8
Kui Meng,
Zeya Li,
Zhansheng Gao,
Xiangyu Bi,
Peng Chen,
Feng Qin,
Caiyu Qiu,
Lingyun Xu,
Junwei Huang,
Jinxiong Wu,
Feng Luo,
Hongtao Yuan
Affiliations
Kui Meng
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Zeya Li
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Zhansheng Gao
Center for the Physics of Low‐Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics Henan University Kaifeng the People's Republic of China
Xiangyu Bi
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Peng Chen
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Feng Qin
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Caiyu Qiu
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Lingyun Xu
Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering Nankai University Tianjin the People's Republic of China
Junwei Huang
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Jinxiong Wu
Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering Nankai University Tianjin the People's Republic of China
Feng Luo
Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering Nankai University Tianjin the People's Republic of China
Hongtao Yuan
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing the People's Republic of China
Abstract The anomalous Hall effect (AHE) that associated with the Berry curvature of occupied electronic states in momentum‐space is one of the intriguing aspects in condensed matter physics, and provides an alternative for potential applications in topological electronics. Previous experiments reported the tunable Berry curvature and the resulting magnetization switching process in the AHE based on strain engineering or chemical doping. However, the AHE modulation by these strategies are usually irreversible, making it difficult to realize switchable control of the AHE and the resultant spintronic applications. Here, we demonstrated the switchable control of the Berry‐curvature‐related AHE by electrical gating in itinerant ferromagnetic Cr7Te8 with excellent ambient stability. The gate‐tunable sign reversal of the AHE can be attributed to the redistribution of the Berry curvature in the band structure of Cr7Te8 due to the intercalation‐induced change in the Fermi level. Our work facilitates the applications of magnetic switchable devices based on gate‐tunable Berry curvature.
