Micromachines (Nov 2021)

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

  • Jun-Kyo Jeong,
  • Jae-Young Sung,
  • Woon-San Ko,
  • Ki-Ryung Nam,
  • Hi-Deok Lee,
  • Ga-Won Lee

DOI
https://doi.org/10.3390/mi12111401
Journal volume & issue
Vol. 12, no. 11
p. 1401

Abstract

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In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D2) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D2 annealing. The suggested curing is found to be effective in improving the device reliability.

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