AIP Advances
(Sep 2011)
Self-polarizing terahertz liquid crystal phase shifter
Xiao-wen Lin,
Jing-bo Wu,
Wei Hu,
Zhi-gang Zheng,
Zi-jian Wu,
Ge Zhu,
Fei Xu,
Biao-bing Jin,
Yan-qing Lu
Affiliations
Xiao-wen Lin
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Jing-bo Wu
Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
Wei Hu
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Zhi-gang Zheng
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Zi-jian Wu
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Ge Zhu
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Fei Xu
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Biao-bing Jin
Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
Yan-qing Lu
College of Engineering and Applied Sciences and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
DOI
https://doi.org/10.1063/1.3626560
Journal volume & issue
Vol. 1,
no. 3
Abstract
Read online
Using sub-wavelength metallic gratings as both transparent electrodes and broadband high-efficiency polarizers, a highly-compact self-polarizing phase shifter is demonstrated by electrically tuning the effective birefringence of a nematic liquid crystal cell. The metal grating polarizers ensure a good polarizing efficiency in the range of 0.2 to 2 THz. Phase shift of more than π/3 is achieved in a 256 μm-thick cell with a saturation root mean square voltage of around 130 V in this integrated device.
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