Âderna Fìzika ta Energetika (Mar 2023)

Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs

  • T. I. Mosiuk,
  • R. M. Vernydub,
  • P. G. Lytovchenko,
  • Yu. B. Myroshnichenko,
  • D. P. Stratilat,
  • V. P. Tartachnyk,
  • V. V. Shlapatska

DOI
https://doi.org/10.15407/jnpae2023.01.027
Journal volume & issue
Vol. 24, no. 1
pp. 27 – 33

Abstract

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We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.

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