Impact of gamma radiation on 8051 microcontroller performance

Abstract

Studying the effects of gamma radiation on the instrumentation and control (I&C) system of a nuclear power plant is critical to the successful and reliable operation of the plant. In the accidental scenario, the adverse environment of ionizing radiation affects the performance of the I&C system and it leads to inaccurate and incomprehensible results. This paper reports the effects of gamma radiation on the AT89C51RD2, a commercial-off-the-shelf 8-bit high-performance flash microcontroller. The microcontroller, selected for the device under test for this study is used in the remote terminal unit for a nuclear power plant. The custom circuits were made to test the microcontroller under different gamma doses using a 60Co gamma source in both ex-situ and in-situ modes. The device was exposed to a maximum dose of 1.5 kGy. Under this hostile environment, the performance of the microcontroller was studied in terms of device current and voltage changes. It was observed that the microcontroller device can operate up to a total absorbed dose of approximately 0.6 kGy without any failure or degradation in its performance.

Keywords

• Single event effects
• Total ionizing dose
• Radiation effects
• Gamma irradiation
• 8051 microcontroller
• Radiation-hardened I&C system