Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
Runze Lin,
Desheng Zhao,
Guohao Yu,
Xiaoyan Liu,
Dongdong Wu,
Erdan Gu,
Xugao Cui,
Ran Liu,
Baoshun Zhang,
Pengfei Tian
Affiliations
Runze Lin
Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China
Desheng Zhao
Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China
Guohao Yu
Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu 215123, China
Xiaoyan Liu
Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China
Dongdong Wu
Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu 215123, China
Erdan Gu
Institute of Photonics, University of Strathclyde, Glasgow G1 1RD, United Kingdom
Xugao Cui
Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China
Ran Liu
Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China
Baoshun Zhang
Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu 215123, China
Pengfei Tian
Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai 200433, China
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.
