Formation of a Boron‐Oxide Termination for the (100) Diamond Surface

Abstract

Abstract A boron‐oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide B2O3 onto the hydrogen‐terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to 950 °C. The resulting termination is highly oriented and chemically homogeneous, although further optimization is required to increase the surface coverage beyond the 0.4 monolayer coverage achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond.

Keywords

• diamond heterointerfaces
• diamond surface
• photoelectron spectroscopy
• surface science