Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate

Abstract

Ga2O3 has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In1−xGax)2O3 thin film grown on an ε-GaFeO3 substrate via the mist chemical vapor deposition process. The X-ray diffraction peak of the thin film was almost coincident with that of the substrate and exhibited Laue oscillations. Atomic force microscopy revealed that the surface of the κ-(In1−xGax)2O3 thin film exhibited a step-terrace morphology and was atomically flat. The selected area electron diffraction of transmission electron microscopy showed that the diffraction spots of the thin film and substrate overlapped, indicating that the thin film was almost lattice-matched with the substrate. We believe that the lattice-matched κ-(In1−xGax)2O3 thin film with an ε-GaFeO3 substrate will contribute significantly to the demonstration of ferroelectric κ-Ga2O3 based high electron mobility transistors.

Keywords

• κ-Ga2O3
• Epitaxial growth
• Mist CVD
• κ-(In1−xGax)2O3
• ε-GaFeO3