Enhancing the Performance of Blue Quantum-Dot Light-Emitting Diodes Based on Mg-Doped ZnO as an Electron Transport Layer

Min-Ming Yan; Yi Li; Yong-Tian Zhou; Li Liu; Yong Zhang; Bao-Gui You; Yang Li

doi:10.1109/JPHOT.2017.2666423

IEEE Photonics Journal (Jan 2017)

Enhancing the Performance of Blue Quantum-Dot Light-Emitting Diodes Based on Mg-Doped ZnO as an Electron Transport Layer

Min-Ming Yan,
Yi Li,
Yong-Tian Zhou,
Li Liu,
Yong Zhang,
Bao-Gui You,
Yang Li

Affiliations

Min-Ming Yan: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
Yi Li: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
Yong-Tian Zhou: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
Li Liu: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
Yong Zhang: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
Bao-Gui You: Guangdong Poly Optoelectronic Co., Ltd., Jiangmen, China
Yang Li: Guangdong Poly Optoelectronic Co., Ltd., Jiangmen, China

DOI: https://doi.org/10.1109/JPHOT.2017.2666423
Journal volume & issue: Vol. 9, no. 2
pp. 1 – 8

Abstract

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Highly efficient blue quantum-dot light-emitting diodes (QD-LEDs) have been fabricated by substituting Mg-doped ZnO (MgxZn1-xO) for ZnO as an electron transporting layer (ETL). The device performance can be enhanced by optimizing Mg-doped ratios for the device structure of ITO/PEDOT:PSS/PVK/QDs/MgxZn1-xO/Al. The maximum luminescence efficiency and maximum brightness of blue QD-LEDs increase from 1.1 cd/A and 1500 cd/m2 for ZnO to 2.3 cd/A and 2500 cd/m2 for 10% Mg-doped ZnO (Mg0.10Zn0.90O), respectively. The improved device performance should be attributed to balance electron and hole injection due to Mg-doped ZnO increasing the band gap and reduce exciton loss at the interface between the ETL and the emissive layer.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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