Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Wenjun Li; Saima Sharmin; Hesameddin Ilatikhameneh; Rajib Rahman; Yeqing Lu; Jingshan Wang; Xiaodong Yan; Alan Seabaugh; Gerhard Klimeck; Debdeep Jena; Patrick Fay

doi:10.1109/JXCDC.2015.2426433

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Jan 2015)

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Wenjun Li,
Saima Sharmin,
Hesameddin Ilatikhameneh,
Rajib Rahman,
Yeqing Lu,
Jingshan Wang,
Xiaodong Yan,
Alan Seabaugh,
Gerhard Klimeck,
Debdeep Jena,
Patrick Fay

Affiliations

Wenjun Li: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
Saima Sharmin: School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA
Hesameddin Ilatikhameneh: School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA
Rajib Rahman: School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA
Yeqing Lu: Synopsys Inc., Mountain View, CA, USA
Jingshan Wang: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
Xiaodong Yan: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
Alan Seabaugh: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
Gerhard Klimeck: School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA
Debdeep Jena: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
Patrick Fay: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA

DOI: https://doi.org/10.1109/JXCDC.2015.2426433
Journal volume & issue: Vol. 1
pp. 28 – 34

Abstract

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The concept and simulated device characteristics of tunneling field-effect transistors (TFETs) based on III-nitride heterojunctions are presented for the first time. Through polarization engineering, interband tunneling can become significant in III-nitride heterojunctions, leading to the potential for a viable TFET technology. Two prototype device designs, inline and sidewall-gated TFETs, are discussed. Polarization-assisted p-type doping is used in the source region to mitigate the effect of the deep Mg acceptor level in p-type GaN. Simulations indicate that TFETs based on III-nitride heterojunctions can be expected to achieve ON/OFF ratios of 106 or more, with switching slopes well below 60 mV/decade, ON-current densities approaching 100 μA/μm, and energy delay products as low as 67 aJ-ps/μm.

Published in IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

ISSN: 2329-9231 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics: Computer engineering. Computer hardware
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6570653

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