Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
Muhammad Usman,
Kiran Saba,
Dong-Pyo Han,
Nazeer Muhammad,
Shabieh Farwa,
Muhammad Rafiq,
Tanzila Saba
Affiliations
Muhammad Usman
Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, Pakistan
Kiran Saba
Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, Pakistan
Dong-Pyo Han
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Nazeer Muhammad
Department of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, Pakistan
Shabieh Farwa
Department of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, Pakistan
Muhammad Rafiq
Department of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, Pakistan
Tanzila Saba
College of Computer and Information Sciences, Prince Sultan University, Riyadh 11586, Saudi Arabia
