Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]

• Muhammad Usman,
• Kiran Saba,
• Dong-Pyo Han,
• Nazeer Muhammad,
• Shabieh Farwa,
• Muhammad Rafiq,
• Tanzila Saba

Affiliations

Muhammad Usman

Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, Pakistan

Kiran Saba

Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, Pakistan

Dong-Pyo Han

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Nazeer Muhammad

Department of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, Pakistan

Shabieh Farwa

Department of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, Pakistan

Muhammad Rafiq

Department of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, Pakistan

Tanzila Saba

College of Computer and Information Sciences, Prince Sultan University, Riyadh 11586, Saudi Arabia