Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
Samatcha Vorathamrong,
Somsak Panyakeow,
Somchai Ratanathammaphan,
Piyasan Praserthdam
Affiliations
Samatcha Vorathamrong
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Somsak Panyakeow
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Somchai Ratanathammaphan
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Piyasan Praserthdam
Center of Excellence on Catalysis and Catalytic Reaction Engineering, Department of Chemical Engineering, Chulalongkorn University, Bangkok 10330, Thailand
This research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates, already covered with native SiO2 developing in different states with identical growth parameters including growth temperature, growth time, and Ga and As flux, using self-assisted VLS process by MBE technique. Results from nanowire samples and substrates were compared to understand the correlation between the changes in appearance of native SiO2 layer and the changes in the growth pattern of the nanowires.
