Strain-engineered diffusive atomic switching in two-dimensional crystals

Janne Kalikka; Xilin Zhou; Eric Dilcher; Simon Wall; Ju Li; Robert E. Simpson

doi:10.1038/ncomms11983

Nature Communications (Jun 2016)

Strain-engineered diffusive atomic switching in two-dimensional crystals

Janne Kalikka,
Xilin Zhou,
Eric Dilcher,
Simon Wall,
Ju Li,
Robert E. Simpson

Affiliations

Janne Kalikka: Singapore University of Technology and Design (SUTD)
Xilin Zhou: Singapore University of Technology and Design (SUTD)
Eric Dilcher: Institut de Ciencies Fotoniques (ICFO), Barcelona Institute of Science and Technology, Castelldefels
Simon Wall: Institut de Ciencies Fotoniques (ICFO), Barcelona Institute of Science and Technology, Castelldefels
Ju Li: Massachusetts Institute of Technology (MIT)
Robert E. Simpson: Singapore University of Technology and Design (SUTD)

DOI: https://doi.org/10.1038/ncomms11983
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 8

Abstract

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Strain engineering allows design of materials with tailored properties. Here, the authors show that strain can be used to control atomic diffusion in Sb2Te3-GeTe superlattices, and they propose general design rules to enable atomic switching functionalities in van der Waals heterostructures.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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