Surface-Passivated CsPbBr₃ for Developing Efficient and Stable Perovskite Photovoltaics

Abstract

All-inorganic perovskites consisting of only inorganic elements have been recently considered as highly stable semiconductors for photoactive layer of optoelectronics applications. However, the formation of high-quality thin film and trap-reduced interface has still remains an important task, which should be solved for improving the performances of all-inorganic perovskite-based photovoltaics. Here, we adopted facile method that could reduce charge-carrier recombination by depositing a passivation agent on the top surface of the CsPbBr3 all-inorganic perovskite layer. We also found that the CsPbBr3 perovskite photovoltaic prepared from surface treatment method using n-octylammonium bromide provides an improved stability in ambient environment and 1-sun illuminating condition. Therefore, the perovskite photovoltaics fabricated from our approach offered an improved power conversion efficiency of 5.44% over that of the control device without surface treatment (4.12%).

Keywords

• CsPbBr₃ all-inorganic perovskite
• interfacial traps
• surface passivation
• device stability