Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

Rongbin Xu; Yang Mei; Huan Xu; Tianrui Yang; Leiying Ying; Zhiwei Zheng; Hao Long; Baoping Zhang; Jianping Liu

doi:10.1109/JPHOT.2020.2979564

IEEE Photonics Journal (Jan 2020)

Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

Rongbin Xu,
Yang Mei,
Huan Xu,
Tianrui Yang,
Leiying Ying,
Zhiwei Zheng,
Hao Long,
Baoping Zhang,
Jianping Liu

Affiliations

Rongbin Xu: ORCiD; School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Yang Mei: ORCiD; School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Huan Xu: School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Tianrui Yang: School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Leiying Ying: School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Zhiwei Zheng: ORCiD; School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Hao Long: ORCiD; School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Baoping Zhang: ORCiD; School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China
Jianping Liu: ORCiD; Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China

DOI: https://doi.org/10.1109/JPHOT.2020.2979564
Journal volume & issue: Vol. 12, no. 2
pp. 1 – 8

Abstract

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Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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