Interband Mid-IR Semiconductor Lasers

Abstract

Significant advances in the room-temperature (RT) continuous-wave (CW) output power of both type-I quantum-well (QW) active-layer lasers and interband cascade lasers have been reported within the 3–4- $\mu\hbox{m}$ wavelength region in 2009. Recent developments on the growth of highly strained QWs and low-defect-density lattice-mismatched materials also demonstrate potential for realizing high-performance mid-infrared (IR) lasers on conventional substrates such as Si, GaAs, and InP.

Keywords

• Semiconductor lasers
• mid-infrared lasers