Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Abstract

Conventionally, the in-plane electronic band structure anisotropy originates from the low crystallographic symmetry in the layered material. Here, using angle-resolved photoemission spectroscopy and density functional theory the authors report that the observed in-plane anisotropic energy band structure of layered gallium telluride is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect.