Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Abstract

Semiconductors with large Landé g-factors allow for both highly spin-polarized states, and precise control of the spin dynamics. Here, the authors make superlattices of two semiconductors, InSb, and InAsSb, and by tuning the conduction and valence band overlap, achieve a Landé g-factor of 104.