Excellent Thermoelectric Performance in KBaTh (Th = Sb, Bi) Based Half-Heusler Compounds and Design of Actuator for Efficient and Sustainable Energy Harvesting Applications

Abstract

To examine the structural, optoelectronic, thermodynamic, and thermoelectric properties of KBaTh (Th = Sb, Bi) half-Heuslers, we used the full potential, linearized augmented plane wave (FP_LAPW) approach as in the Wien2K simulator. Generalized gradient approximation (GGA), technique, was used for the structural optimization. Mechanical stability and ductility were inherent characteristics of the studied KBaTh (Th = Sb, Bi). Having band gaps of 1.31 eV and 1.20 eV for the KBaTh (Th = Sb, Bi) compounds, they have a semiconducting character. The KBaTh (Th = Sb, Bi) compounds are suggested for use in optoelectronic devices based on studies of their optical characteristics. Thermoelectric properties were investigated using the Boltzmann transport provided by the BoltzTraP software. Since the acquired figures of merit (ZT) values for the KBaTh (Th = Sb, Bi) compounds are all almost equal to one at room temperature, this demonstrates that these substances can be used in thermoelectric devices. Additionally, we used the Slack method to determine the lattice thermal conductivity of KBaTh (Th = Sb, Bi). Our research shows that the half-Heusler compounds under investigation increase actuator response time and hence can be considered as good materials for actuators.

Keywords

• actuator
• band gap
• coefficient of thermal conductivity
• density of states
• figure of merit
• half-Heusler