Complementary Barrier Infrared Detector Architecture for Long-Wavelength Infrared InAs/InAsSb Type-II Superlattice

David Z. Ting; Alexander Soibel; Arezou Khoshakhlagh; Anita M. Fisher; Brian J. Pepper; Sam A. Keo; Cory J. Hill; Sir B. Rafol; Sarath D. Gunapala

doi:10.3390/app122412508

Applied Sciences (Dec 2022)

Complementary Barrier Infrared Detector Architecture for Long-Wavelength Infrared InAs/InAsSb Type-II Superlattice

David Z. Ting,
Alexander Soibel,
Arezou Khoshakhlagh,
Anita M. Fisher,
Brian J. Pepper,
Sam A. Keo,
Cory J. Hill,
Sir B. Rafol,
Sarath D. Gunapala

Affiliations

David Z. Ting: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Alexander Soibel: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Arezou Khoshakhlagh: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Anita M. Fisher: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Brian J. Pepper: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Sam A. Keo: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Cory J. Hill: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Sir B. Rafol: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Sarath D. Gunapala: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA

DOI: https://doi.org/10.3390/app122412508
Journal volume & issue: Vol. 12, no. 24
p. 12508

Abstract

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We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them. Specifically, we have explored the complementary barrier infrared detector (CBIRD) that contains p-type InAs/InAsSb T2SLS absorbers for enhancing quantum efficiency, while also suppressing surface shunt current. We describe selected device results, and also provide references to additional results and more in-depth discussions.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

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