Compact artificial neuron based on anti-ferroelectric transistor

Rongrong Cao; Xumeng Zhang; Sen Liu; Jikai Lu; Yongzhou Wang; Hao Jiang; Yang Yang; Yize Sun; Wei Wei; Jianlu Wang; Hui Xu; Qingjiang Li; Qi Liu

doi:10.1038/s41467-022-34774-9

Nature Communications (Nov 2022)

Compact artificial neuron based on anti-ferroelectric transistor

Rongrong Cao,
Xumeng Zhang,
Sen Liu,
Jikai Lu,
Yongzhou Wang,
Hao Jiang,
Yang Yang,
Yize Sun,
Wei Wei,
Jianlu Wang,
Hui Xu,
Qingjiang Li,
Qi Liu

Affiliations

Rongrong Cao: College of Electronic Science and Technology, National University of Defense Technology
Xumeng Zhang: Frontier Institute of Chip and System, Fudan University
Sen Liu: College of Electronic Science and Technology, National University of Defense Technology
Jikai Lu: Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences
Yongzhou Wang: College of Electronic Science and Technology, National University of Defense Technology
Hao Jiang: Frontier Institute of Chip and System, Fudan University
Yang Yang: Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences
Yize Sun: Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences
Wei Wei: Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences
Jianlu Wang: Frontier Institute of Chip and System, Fudan University
Hui Xu: College of Electronic Science and Technology, National University of Defense Technology
Qingjiang Li: College of Electronic Science and Technology, National University of Defense Technology
Qi Liu: Frontier Institute of Chip and System, Fudan University

DOI: https://doi.org/10.1038/s41467-022-34774-9
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 10

Abstract

Read online

The scalability of neuromorphic devices depends on the dismissal of capacitors and additional circuits. Here Liu et al. report an artificial neuron based on the polarization and depolarization of an anti-ferroelectric film, avoiding additional elements and reaching 37 fJ/spike of power consumption.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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