Sensors (Sep 2014)

A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

  • Kyriaki Manoli,
  • Liviu Mihai Dumitru,
  • Mohammad Yusuf Mulla,
  • Maria Magliulo,
  • Cinzia Di Franco,
  • Maria Vittoria Santacroce,
  • Gaetano Scamarcio,
  • Luisa Torsi

DOI
https://doi.org/10.3390/s140916869
Journal volume & issue
Vol. 14, no. 9
pp. 16869 – 16880

Abstract

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Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made.

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