Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Swarnav Mukhopadhyay; Cheng Liu; Jiahao Chen; Md Tahmidul Alam; Surjava Sanyal; Ruixin Bai; Guangying Wang; Chirag Gupta; Shubhra S. Pasayat

doi:10.3390/cryst13101456

Crystals (Sep 2023)

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Swarnav Mukhopadhyay,
Cheng Liu,
Jiahao Chen,
Md Tahmidul Alam,
Surjava Sanyal,
Ruixin Bai,
Guangying Wang,
Chirag Gupta,
Shubhra S. Pasayat

Affiliations

Swarnav Mukhopadhyay: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Cheng Liu: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Jiahao Chen: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Md Tahmidul Alam: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Surjava Sanyal: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Ruixin Bai: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Guangying Wang: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Chirag Gupta: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Shubhra S. Pasayat: Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA

DOI: https://doi.org/10.3390/cryst13101456
Journal volume & issue: Vol. 13, no. 10
p. 1456

Abstract

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In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (13 cm−2 with a room-temperature mobility of 1710 cm2/V·s was obtained via Hall measurement using the Van der Pauw method. These state-of-the-art results show great potential for high-power Ga-polar HEMT design on sapphire substrates.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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