Physical Review X (Nov 2018)

Single-Shot Single-Gate rf Spin Readout in Silicon

  • P. Pakkiam,
  • A. V. Timofeev,
  • M. G. House,
  • M. R. Hogg,
  • T. Kobayashi,
  • M. Koch,
  • S. Rogge,
  • M. Y. Simmons

DOI
https://doi.org/10.1103/PhysRevX.8.041032
Journal volume & issue
Vol. 8, no. 4
p. 041032

Abstract

Read online Read online

For solid-state spin qubits, single-gate rf readout can minimize the number of gates required for scale-up since the readout sensor can integrate into the existing gates used to manipulate the qubits. However, state-of-the-art topological error correction codes benefit from the ability to resolve the qubit state within a single shot, that is, without repeated measurements. Here, we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of 82.9% at 3.3 kHz measurement bandwidth. We use this technique to measure a triplet T_{-} to singlet S_{0} relaxation time of 0.62 ms in precision donor quantum dots in silicon. We also show that the use of rf readout does not impact the spin lifetimes (S_{0} to T_{-} decay remained approximately 2 ms at zero detuning). This establishes single-gate sensing as a viable readout method for spin qubits.