Strengthening Multi‐Factor Authentication Through Physically Unclonable Functions in PVDF‐HFP‐Phase‐Dependent a‐IGZO Thin‐Film Transistors

Abstract

Abstract For enhanced security in hardware‐based security devices, it is essential to extract various independent characteristics from a single device to generate multiple keys based on specific values. Additionally, the secure destruction of authentication information is crucial for the integrity of the data. Doped amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistors (TFTs) using poly(vinylidene fluoride‐co‐hexafluoropropylene) (PVDF‐HFP) induce a dipole doping effect through a phase‐transition process, creating physically unclonable function (PUF) devices for secure user information protection. The PUF security key, generated at VGS = 20 V in a 20 × 10 grid, demonstrates uniformity of 42% and inter‐Hamming distance (inter‐HD) of 49.79% in the β‐phase of PVDF‐HFP. However, in the γ‐phase, the uniformity drops to 22.5%, and inter‐HD decreases to 35.74%, indicating potential security key destruction during the phase transition. To enhance security, a multi‐factor authentication (MFA) system is integrated, utilizing five security keys extracted from various TFT parameters. The security keys from turn‐on voltage (VON), VGS = 20 V, VGS = 30 V, mobility, and threshold voltage (Vth) exhibit near‐ideal uniformities and inter‐HDs, with the highest values of 58% and 51.68%, respectively. The dual security system, combining phase transition and MFA, establishes a robust protection mechanism for privacy‐sensitive user information.

Keywords

• crypto‐shredding
• decryption
• encryption
• metal oxide
• multi‐factor authentication
• phase transition