Proceedings (Jun 2019)

Sub-ppm NO<sub>2</sub> Sensing in Temperature Cycled Mode with Ga Doped ZnO Thin Films Deposited by RF Sputtering

  • Lionel Presmanes,
  • Vignesh Gunasekaran,
  • Yohann Thimont,
  • Inthuga Sinnarasa,
  • Antoine Barnabe,
  • Philippe Tailhades,
  • Frédéric Blanc,
  • Chabane Talhi,
  • Philippe Menini

DOI
https://doi.org/10.3390/proceedings2019014048
Journal volume & issue
Vol. 14, no. 1
p. 48

Abstract

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In this work Ga doped ZnO thin films have been deposited by RF magnetron sputtering onto a silicon micro-hotplate and their structural, microstructural and gas sensing properties have been studied. ZnO:Ga thin film with a thickness of 50 nm has been deposited onto a silicon based micro-hotplates without any photolithography process thanks to a low cost and reliable stencil mask process. Sub-ppm sensing (500 ppb) of NO2 gas at low temperature (50 °C) has been obtained with promising responses R/R0 up to 18.

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