Materials (Jul 2024)
Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (<i>Al</i><sub>2</sub><i>O</i><sub>3</sub>) Abrasive. <i>Materials</i> 2024, <i>17</i>, 679
Abstract
In the original publication [...]
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