Diode Physical Parameters for HEXFETs Characterization of Dose Effect

Abstract

Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral body-drain junction. A large increase of the ideality factor and series resistance is related to radiation-induced defects.

Keywords

• Dose effects
• HEXFET
• diode parameters.