High-yield Micro-LED laser transfer accomplished using an ablation-type release material
Yujie Xie,
Xin Lin,
Taifu Lang,
Xiaowei Huang,
Xuehuang Tang,
Shuaishuai Wang,
Chang Lin,
Kaixin Zhang,
Jie Sun,
Qun Yan
Affiliations
Yujie Xie
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Xin Lin
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Taifu Lang
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Xiaowei Huang
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Xuehuang Tang
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Shuaishuai Wang
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Chang Lin
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
Kaixin Zhang
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Jie Sun
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Qun Yan
National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
Micro light-emitting diode (Micro-LED) is a highly promising technology in the field of new displays, with the mass transfer process involved in its manufacturing process widely regarded as a major barrier to their further development. This study adopts laser transfer technology as the primary solution, using ablation-type transfer release materials that improve chip utilization rates over blister-type release materials. In addition, measurement of the laser transfer parameters, inspection, and laser repair technology are combined to achieve a transfer yield of about 100% to the carrier substrate and a cumulative transfer displacement of less than 1 µm in the Micro-LED inverted chip array. Furthermore, cleaning agents were used to remove adhesive residue from the receiving substrate after transfer, improving the bonding yield between the chip and the thin film transistor driver circuit board. This study provides a feasible solution for Micro-LED mass transfer, which could boost its further development toward commercial application.
