Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

Thermal Science. 2013;17(5):1277-1283 DOI 10.2298/TSCI1305277H

 

Journal Homepage

Journal Title: Thermal Science

ISSN: 0354-9836 (Print)

Publisher: VINCA Institute of Nuclear Sciences

LCC Subject Category: Technology: Mechanical engineering and machinery

Country of publisher: Serbia

Language of fulltext: English

Full-text formats available: PDF

 

AUTHORS


Hsu Chih-Neng (National Chin-Yi University of Technology, Department of Refrigeration, Air Conditioning and Energy Engineering, Taichung City, Taiwan, R.O.C.)

Chang Yu-Hao (Minghsin University of Science and Technology, Institute of Precision Mechatronic Engineering, Hsinchu County, Taiwan, R.O.C.)

Liu Chang-Yuan (Minghsin University of Science and Technology, Department of Mechanical Engineering, Hsinchu County, Taiwan, R.O.C.)

Fang Shih-Hao (National Chin-Yi University of Technology, Department of Refrigeration, Air Conditioning and Energy Engineering, Taichung City, Taiwan, R.O.C.)

Huang Chun-Chieh (National Chin-Yi University of Technology, Department of Refrigeration, Air Conditioning and Energy Engineering, Taichung City, Taiwan, R.O.C.)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 36 weeks

 

Abstract | Full Text

This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.