<inline-formula><tex-math notation="LaTeX">$V$</tex-math></inline-formula>- and <inline-formula><tex-math notation="LaTeX">$W$</tex-math></inline-formula>-Band Millimeter-Wave GaN MMICs

Abstract

This paper gives an overview of published results with GaN MMICs for millimeter-wave front ends at frequencies above 60 GHz, including power and low-noise amplifiers, switches, phase shifters, frequency multipliers and oscillators. Some design methods and demonstrated experimental results obtained at W band from MMICs fabricated in a 40-nm GaN on 50--$\mu$m SiC process are then presented. These include 75 to 110 GHz power amplifiers with 20–27 dBm output power and 10–17 dB gain, switches with 2 dB insertion loss and 20 dB isolation, and continuous phase shifters with 2–11 dB loss and 0$^\circ$–90$^\circ$ of tunable phase shift. Additional MMICs include frequency doublers and triplers, oscillators, circulators and mixers, designed for higher levels of on-chip integration towards a W-band front end.

Keywords

• Broadband
• frequency doubler
• front end
• GaN
• MMIC
• millimeter wave