Nature Communications (Nov 2019)

Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

  • Brian S. Y. Kim,
  • Yasuyuki Hikita,
  • Takeaki Yajima,
  • Harold Y. Hwang

DOI
https://doi.org/10.1038/s41467-019-13290-3
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 7

Abstract

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Two-dimensional heterostructures combined with vertical geometries trigger superior functionalities in fundamental studies and applications. Here, the authors report vertical perovskite hot-electron transistors integrated with perovskite one-dimensional edge contacts down to the monolayer limit.